The electronic properties of single-layer and multilayer MoS2 under high pressure

Journal of Physical Chemistry C

Volumn 119, Issue 19, 2015, Pages 10189-10196

  Fan, Xiaofeng ^a   Chang, C H ^b,c   Zheng, W T ^a   Kuo, Jer Lai ^c   Singh, David J ^a,d  

^a JILIN UNIVERSITY   (China)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MULTILAYERS; VAN DER WAALS FORCES;

BOND ANGLE; D ELECTRONS; FIRST PRINCIPLES METHOD; HIGH PRESSURE; K POINTS; REAL-SPACE; SINGLE LAYER; VAN DER WAALS INTERACTIONS;

SULFUR COMPOUNDS;

EID: 84929326164     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b00317     Document Type: Article

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