Carrier-capture characteristics of point defects in GaN and ZnO

AIP Conference Proceedings

Volumn 1583, Issue , 2014, Pages 127-131

  Reshchikov, Michael A ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

capture coefficients; GaN; photoluminescence; ZnO

Indexed keywords

EID: 84929132902     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.4865619     Document Type: Conference Paper

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