Unusual properties of the dominant acceptor in freestanding GaN

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 448-451

  Reshchikov, M A ^a   Park, S S ^b   Lee, K Y ^b   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

GaN; Time resolved photoluminescence; Yellow luminescence

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; ELECTRONS; MONOCHROMATORS; PHOTOLUMINESCENCE; SAPPHIRE; THERMAL EFFECTS;

CONDUCTION BAND; DONOR ACCEPTOR PAIR (DAP); PULSE EXCITATION;

GALLIUM NITRIDE;

EID: 0347316559     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.026     Document Type: Conference Paper

References (8)

1. Morkoç H. Mater. Sci. Eng. R. 33:2001;135. and references therein.
2. Reshchikov M.A., Morkoç H., Park S.S., Lee K.Y. Appl. Phys. Lett. 81:2002;4970.
3. Reshchikov M.A., Zafar Iqbal M., Morkoç H., Park S.S., Lee K.Y. Appl. Phys. Lett. 83:2003;266.
4. Huang D., Yun F., Reshchikov M.A., Wang D., Morkoç H., Rode D.L., Farina L.A., Kurdak C., Park S.S., Lee K.Y. Solid-State Electron. 75:2001;711.
5. Dingle R., Ilegems M. Solid State Commun. 9:1971;175.
6. Korotkov R.Y., Reshchikov M.A., Wessels B.W. Physica B. 325:2003;1.
7. M.A. Reshchikov, H. Morkoç, S.S. Park, K.Y. Lee, unpublished.
8. Reshchikov M.A., Morkoç H., Park S.S., Lee K.Y. Appl. Phys. Lett. 78:2001;2882.