Transient photoluminescence of defect transitions in freestanding GaN

Applied Physics Letters

Volumn 78, Issue 19, 2001, Pages 2882-2884

  Reshchikov, M A ^a   Morkoc H ^a   Park, S S ^b   Lee, K Y ^b  

^a Virginia Commonwealth University   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035821115     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1370119     Document Type: Article

References (18)

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