Synthesis of atomically thin transition metal disulfides for charge transport layers in optoelectronic devices

ACS Nano

Volumn 9, Issue 4, 2015, Pages 4146-4155

  Kwon, Ki Chang ^a   Kim, Cheolmin ^b   Le, Quyet Van ^b   Gim, Seungo ^c   Jeon, Jong Myeong ^a   Ham, Ju Young ^c   Lee, Jong Lam ^c   Jang, Ho Won ^a   Kim, Soo Young ^b  

^a Seoul National University   (South Korea)

^b Chung Ang University   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

chemical vapor deposition; hole injection layer; organic light emitting diodes; organic photovoltaics; transition metal disulfide

Indexed keywords

CARRIER TRANSPORT; CHARGE INJECTION; CHEMICAL VAPOR DEPOSITION; CONDUCTING POLYMERS; DEPOSITION; LIGHT EMITTING DIODES; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; SULFUR COMPOUNDS; TRANSITION METALS;

CHEMICAL DEPOSITION METHOD; HOLE INJECTION LAYERS; ORGANIC LIGHT EMITTING DIODES(OLEDS); ORGANIC PHOTOVOLTAIC (OPV); ORGANIC PHOTOVOLTAICS; POLY(3 ,4-ETHYLENEDIOXYTHIOPHENE):POLY(STYRENESULFONATE); POLYCRYSTALLINE STRUCTURE; POWER CONVERSION EFFICIENCIES;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 84928963510     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01504     Document Type: Article

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