The atomic details of the interfacial interaction between the bottom electrode of Al/AlOx/Al Josephson junctions and HF-treated Si substrates

Journal of Applied Physics

Volumn 117, Issue 16, 2015, Pages

  Zeng, L J ^a   Krantz, P ^a   Nik, S ^a   Delsing, P ^a   Olsson, E ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; ELECTRODES; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; JOSEPHSON JUNCTION DEVICES; SUBSTRATES;

AL ELECTRODE; AMORPHOUS LAYER; BOTTOM CONTACTS; BOTTOM ELECTRODES; CHEMICAL BONDING STATE; ENERGY LOSS NEAR EDGE STRUCTURE; INTERFACIAL INTERACTION; SI SUBSTRATES;

CRYSTAL ATOMIC STRUCTURE;

EID: 84928920067     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4919224     Document Type: Article

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