Synthesis, structure, thermoelectric properties, and band gaps of alkali metal containing type I clathrates: A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38

Chemistry of Materials

Volumn 27, Issue 8, 2015, Pages 2812-2820

  Sui, Fan ^a   He, Hua ^b   Bobev, Svilen ^b   Zhao, Jing ^a   Osterloh, Frank E ^a   Kauzlarich, Susan M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CESIUM COMPOUNDS; CHEMICAL ELEMENTS; ELECTRIC CONDUCTIVITY; ENERGY GAP; HYDRATES; RUBIDIUM COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SPARK PLASMA SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

HEAVY ELEMENTS; N-TYPE SEMICONDUCTORS; P TYPE SEMICONDUCTOR; SURFACE PHOTOVOLTAGE SPECTROSCOPY; SYNCHROTRON POWDER DIFFRACTION; TEMPERATURE RANGE; THERMOELECTRIC PROPERTIES; TYPE-I CLATHRATE;

TUNGSTEN COMPOUNDS;

EID: 84928691737     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm504436v     Document Type: Article

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