Quantum Hall effect on top and bottom surface states of topological insulator (Bi11-x Sbx)2 Te3 films

Nature Communications

Volumn 6, Issue , 2015, Pages

  Yoshimi, R ^a   Tsukazaki, A ^b,c   Kozuka, Y ^a   Falson, J ^a   Takahashi, K S ^d   Checkelsky, J G ^a,e   Nagaosa, N ^a,d   Kawasaki, M ^a,d   Tokura, Y ^a,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d RIKEN Center for Emergent Matter Science   (Japan)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGEN; GRAPHENE;

MAGNETIC FIELD; QUANTUM MECHANICS; THREE-DIMENSIONAL MODELING; TOPOLOGY; WAVE EQUATION;

ARTICLE; CHEMICAL PHENOMENA; ELECTRIC CONDUCTANCE; ELECTRICAL EQUIPMENT; ELECTRON TRANSPORT; ELECTRONICS; ENERGY; FIELD EFFECT TRANSISTOR; INSULATOR; MAGNETIC FIELD; QUANTUM HALL EFFECT; STATIC ELECTRICITY; SURFACE PROPERTY;

EID: 84928148662     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7627     Document Type: Article

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