Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

Nature Communications

Volumn 6, Issue , 2015, Pages

  Yajima, Takeaki ^a,b   Hikita, Yasuyuki ^a   Minohara, Makoto ^a,c   Bell, Christopher ^a,f   Mundy, Julia A ^d   Kourkoutis, Lena F ^d   Muller, David A ^d   Kumigashira, Hiroshi ^e   Oshima, Masaharu ^b   Hwang, Harold Y ^a,c  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c STANFORD UNIVERSITY   (United States)

^d School of Operations Research and Industrial Engineering   (United States)

^e HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^f UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

NIOBIUM; OXIDE; PEROVSKITE; RUTHENIUM; STRONTIUM; STRONTIUM TITANATE; UNCLASSIFIED DRUG;

CATALYST; ELECTRON; ELECTRONIC EQUIPMENT; OXIDE; PEROVSKITE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CATALYST; CHEMICAL STRUCTURE; DIPOLE; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON; ENERGY; EQUIPMENT DESIGN; OSCILLATION; OXIDATION REDUCTION POTENTIAL; PHOTOCATALYSIS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR;

EID: 84926666891     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7759     Document Type: Article

References (27)

1. Kroemer, H. Quasi-electric fields and band offsets: teaching electrons new tricks. Nobel lecture, http://nobelprize.org/nobel-prizes/physics/laureates/2000/kroemer-lecture.html (2000).
2. Tsukazaki, A. et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat. Mater. 4, 42-46 (2005).
3. Nomura, K. et al. Room-temperature fabrication of transparent flexible thinfilm transistors using amorphous oxide semiconductors. Nature 432, 488-492 (2004).
4. Hwang, H. Y. et al. Emergent phenomena at oxide interfaces. Nat. Mater. 11, 103-113 (2012).
5. Fujishima, A. & Honda, K. Electrochemical photolysis of water at a semiconductor electrode. Nature 238, 37-38 (1972).
6. Kato, H., Asakura, K. & Kudo, A. Highly efficient water splitting into H2 and O2 over lanthanum-doped photocatalysts with high crystallinity and surface nanostructure. J. Am. Chem. Soc. 125, 3082-3089 (2003).
7. O'Regan, B. & Grätzel, M. A low-cost, high-efficiency solar cell based on dyesensitized colloidal TiO2 films. Nature 353, 737-740 (1991).
8. Anderson, R. L. Experiments on Ge-GaAs heterojunctions. Solid State Electron. 5, 341-351 (1962).
9. Cowley, A. M. & Sze, S. M. Surface states and barrier height of metalsemiconductor systems. J. Appl. Phys. 36, 3212-3220 (1965).
10. Kurtin, S., McGill, T. C. & Mead, C. A. Fundamental transition in the electronic nature of solids. Phys. Lev. Lett. 22, 1433-1436 (1969).
11. Dong, Y. F., Mi, Y. Y., Feng, Y. P., Huan, A. C. H. & Wang, S. J. Ab initio studies on Schottky barrier heights at metal gate/LaAlO3 (001) interfaces. Appl. Phys. Lett. 89, 122115 (2006).
12. Minohara, M., Ohkubo, I., Kumigashira, H. & Oshima, M. Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3/Nb:SrTiO3 and SrRuO3/Nb:SrTiO3 determined by in situ photoemission spectroscopy. Appl. Phys. Lett. 90, 132123 (2007).
13. Hikita, Y., Kozuka, Y., Susaki, T., Takagi, H. & Hwang, H. Y. Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions. Appl. Phys. Lett. 90, 143507 (2007).
14. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices 3rd edn (John Wiley & Sons, 2007).
15. Tung, R. T. Electron transport of inhomogeneous Schottky barrier. Appl. Phys. Lett. 58, 2821-2823 (1991).
16. Sullivan, J. P., Tung, R. T., Pinto, M. R. & Graham, W. R. Electron transport of inhomogeneous Schottky barrier: a numerical study. J. Appl. Phys. 70, 7403-7424 (1991).
17. Fowler., R. H. The analysis of photoelectric sensitivity curves for clean metals at various temperatures. Phys. Rev. 38, 45-56 (1931).
18. Niles, D. W., Margaritondo, G., Perfetti, P., Quaresima, C. & Capozi, M. Heterojunction band discontinuity control by ultrathin intralayers. Appl. Phys. Lett. 47, 1092-1094 (1985).
19. Ohtomo, A., Muller, D. A., Grazul, J. L. & Hwang, H. Y. Artificial chargemodulation in atomic-scale perovskite titanate superlattices. Nature 419, 378-380 (2002).
20. Sato, H. K. et al. Nanometer-scale epitaxial strain release in perovskite heterostructures using 'SrAlOx' sliding buffer layers. Appl. Phys. Lett. 98, 171901 (2011).
21. Yu, Y. & Zunger, A. A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces. Nat. Commun. 5, 5118 (2014).
22. Jang, H. W. et al. Metallic and insulating oxide interfaces controlled by electronic correlations. Science 331, 886-889 (2011).
23. Campbell, I. H. et al. Controlling charge injection in organic electronic devices using self-assembled monolayers. Appl. Phys. Lett. 71, 3528-3530 (1997).
24. Marmont, P. et al. Improving charge injection in organic thin-film transistors with thiol-based self-assembled monolayers. Org. Electron. 9, 419-424 (2008).
25. Shannon, J. M. Control of Schottky barrier height using highly doped surface layers. Solid State Electron. 19, 537-543 (1976).
26. Han, C. C. et al. Barrier height modification of metal/germanium Schottky diodes. J. Vac. Sci. Technol. B 6, 1662-1666 (1988).
27. Koyanagi, K., Kasai, S. & Hasegawa, H. Control of GaAs Schottky barrier height by ultrathin molecular beam epitaxy Si interface control layer. Jpn J. Appl. Phys. 32, 502-510 (1993).