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Journal of Applied Physics

Volumn 117, Issue 12, 2015, Pages

Band gap engineering via doping: A predictive approach

(2) Andriotis, Antonis N a Menon, Madhu b

a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

b UNIVERSITY OF KENTUCKY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; SEMICONDUCTOR DOPING; VALENCE BANDS;

ACCURATE PREDICTION; BAND ANTICROSSING; BAND GAP ENGINEERING; ELECTRONIC PROCESS; QUANTITATIVE LEVEL; RE-HYBRIDIZATION; VALENCE-BAND MAXIMUMS; WIDE-BAND-GAP SEMICONDUCTOR;

ENERGY GAP;

EID: 84926322872 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4916252 Document Type: Article

Times cited : (31)

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