Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy

Applied Physics Letters

Volumn 102, Issue 10, 2013, Pages

  Yu, K M ^a   Sarney, W L ^b   Novikov, S V ^c   Detert, D ^a,d   Zhao, R ^a,d   Denlinger, J D ^a   Svensson, S P ^b   Dubon, O D ^a,b   Walukiewicz, W ^a   Foxon, C T ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; BAND GAP REDUCTION; CRYSTALLINITIES; LOW GROWTH TEMPERATURE; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; PHOTOELECTROCHEMICAL APPLICATIONS;

ALLOYS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; TEMPERATURE;

GALLIUM NITRIDE;

EID: 84875152232     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795446     Document Type: Article

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