Composition dependence of the hole mobility in Ga Sbx As1-x

Applied Physics Letters

Volumn 92, Issue 16, 2008, Pages

  Alberi, K ^a,b   Dubon, O D ^a,b   Walukiewicz, W ^b   Yu, K M ^b   Gupta, J A ^c   Baribeau, J M ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GALLIUM; MATHEMATICAL MODELS; VALENCE BANDS;

ANTICROSSING INTERACTION; ANTICROSSING MODEL; ENHANCED SCATTERING;

HOLE MOBILITY;

EID: 42549093566     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2912534     Document Type: Article

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