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Nano Letters

Volumn 15, Issue 3, 2015, Pages 2006-2010

Compressive straining of bilayer phosphorene leads to extraordinary electron mobility at a new conduction band edge

(4) Morgan Stewart, Henry a Shevlin, Stephen A a Catlow, C Richard A a Guo, Zheng Xiao a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

2D; bilayer; mobility; Phosphorene; strain

Indexed keywords

CARRIER MOBILITY; CONDUCTION BANDS; ELECTRON MOBILITY; GROUND STATE;

ACOUSTIC PHONONS; BI-LAYER; CARRIER SCATTERING; CONDUCTION BAND EDGE; CONDUCTION-BAND MINIMUM; DEFORMATION POTENTIAL APPROXIMATION; ORDERS OF MAGNITUDE; PHOSPHORENE;

STRAIN;

EID: 84924615936 PISSN: 15306984 EISSN: 15306992 Source Type: Journal
DOI: 10.1021/nl504861w Document Type: Article

Times cited : (41)

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