Erratum: Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance (Scientific Reports (2014) 4 (6946) doi: 10.1038/srep06946);Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Qin, Guangzhao ^a   Yan, Qing Bo ^a   Qin, Zhenzhen ^b   Yue, Sheng Ying ^a   Cui, Hui Juan ^a   Zheng, Qing Rong ^a   Su, Gang ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84922921709     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep21233     Document Type: Erratum

References (57)

1. Basu, R. et al. Improved thermoelectric performance of hot pressed nanostructured n-type SiGe bulk alloys. J. Mater. Chem. A 2, 6922-6930 (2014).
2. Sales, B. C. Smaller is cooler. Science 295, 1248-1249 (2002).
3. Bell, L. E. Cooling, heating, generating power, and recovering waste heat with thermoelectric systems. Science 321, 1457-1461 (2008).
4. Tritt, T. M., Botner, H. & Chen, L. Thermoelectrics: Direct solar thermal energy conversion. MRS Bulletin 33, 366-368 (2008).
5. Snyder, G. J. & Toberer, E. S. Complex thermoelectric materials. Nat. Mater. 7, 105-114 (2008).
6. Goldsmid, H. J., Sheard, A. R. & Wright, D. A. The performance of bismuth telluride thermojunctions. Br. J. Appl. Phys. 9, 365 (1958).
7. Siivola, E., Colpitts, T. & O'Quinn, B. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature 413, 597-602 (2001).
8. Zhao, L.-D. et al. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. Nature 508, 373-377 (2014).
9. Akahama, Y., Endo, S. & Narita, S.-I. Electrical properties of black phosphorus single crystals. J. Phys. Soc. Jpn. 52, 2148-2155 (1983).
10. Li, L. et al. Black phosphorus field-effect transistors. Nature Nanotech. 9, 372-377 (2014).
11. Liu, H. et al. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033-4041 (2014).
12. Qiao, J., Kong, X., Hu, Z.-X., Yang, F. & Ji, W. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014).
13. Jiang, J.-W. & Park, H. S. Negative poisson's ratio in single-layer black phosphorus. Nat. Commun. 5, 4727 (2014).
14. Tran, V., Soklaski, R., Liang, Y. & Yang, L. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 87, 125148 (2014).
15. Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).
16. Low, T. et al. Tunable optical properties of multilayer black phosphorus thin films. Phys. Rev. B 90, 075434 (2014).
17. Dai, J. & Zeng, X. C. Bilayer Phosphorene: Effect of Stacking Order on Bandgap and Its Potential Applications in Thin-Film Solar Cells. J. Phys. Chem. Lett. 5, 1289-293 (2014).
18. Tran, V. & Yang, L. Scaling laws for the band gap and optical response of phosphorene nanoribbons. Phys. Rev. B 89, 245407 (2014).
19. Fei, R. & Yang, L. Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus. Nano Lett. 14, 2884-2889 (2014).
20. Koenig, S. P., Doganov, R. A., Schmidt, H., Castro Neto, A. H. & Oezyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014).
21. Pardo, V., Botana, A. S. & Baldomir, D. Strain effects to optimize thermoelectric properties of hole-doped La2NiO4 1 d via ab initio calculations. Phys. Rev. B 87, 125148 (2013).
22. Luo, X., Sullivan, M. B. & Quek, S. Y. First-principles investigations of the atomic, electronic, and thermoelectric properties of equilibrium and strained Bi2Se3 and Bi2Te3 including van der waals interactions. Phys. Rev. B 86, 184111 (2012).
23. Hinsche, N. F., Yavorsky, B. Y., Mertig, I. & Zahn, P. Influence of strain on anisotropic thermoelectric transport in Bi2Te3 and Sb2Te3. Phys. Rev. B 84, 165214 (2011).
24. Saeed, Y., Singh, N. & Schwingenschlol, U. Thickness and strain effects on the thermoelectric transport in nanostructured Bi2Se3. Appl. Phys. Lett. 104, 033105 (2014).
25. Amin, B., Singh, N., Tritt, T. M., Alshareef, H. N. & Schwingenschlol, U. Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under strain. Appl. Phys. Lett. 103, 031907 (2013).
26. Du, Y., Ouyang, C., Shi, S. & Lei, M. Ab initio studies on atomic and electronic structures of black phosphorus. J. Appl. Phys. 107, 093718 (2010).
27. Tkatchenko, A. & von Lilienfeld, O. A. Adsorption of Ar on graphite using london dispersion forces corrected kohn-sham density functional theory. Phys. Rev. B 73, 153406 (2006).
28. Okajima, M., Endo, S., Akahama, Y. & Narita, S. lectrical Investigation of Phase Transition in Black Phosphorus under High Pressure. Jpn. J. Appl. Phys. 23, 15 (1984).
29. Morita, A. Semiconducting black phosphorus. Appl. Phys. A 39, 227-242 (1986).
30. Appalakondaiah, S., Vaitheeswaran, G., Lebègue, S., Christensen, N. E. & Svane, A. Effect of van der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev. B 86, 035105 (2012).
31. Kzuki, Y., Hanayama, Y., Kimura, M., Nishitake, T. & Endo, S. Measurement of Ultrasound Velocity in the Single Crystal of Black Phosphorus up to 3.3 GPa Gas Pressure. J. Phys. Soc. Jpn. 60, 1612-1618 (1991).
32. Yoshizawa, M., Shirotani, I. & Fujimura, T. Thermal and Elastic Properties of Black Phosphorus. J. Phys. Soc. Jpn. 55, 1196-1202 (1986).
33. Warschauer, D. Electrical and optical properties of crystalline black phosphorus. J. Appl. Phys. 34, 1853-1860 (1963).
34. Cui, H.-J., Sheng, X.-L., Yan, Q.-B., Zheng, Q.-R. & Su, G. Strain-induced dirac cone-like electronic structures and semiconductor-semimetal transition in graphdiyne. Phys. Chem. Chem. Phys. 15, 8179-8185 (2013).
35. Almgren, R. F. Isotropic three-dimensional structure with Poisson's ratio521. Journal of Elasticity 15, 427-430 (1985).
36. Valant, M. et al. Molecular Auxetic Behavior of Epitaxial Co-Ferrite Spinel Thin Film. Advanced Functional Materials 20, 644-647 (2010).
37. Shufrin, I., Pasternak, E. & Dyskin, A. V. Planar isotropic structures with negative Poisson's ratio. International Journal of Solids and Structures 49, 2239-2253 (2012).
38. Pasternak, E. & Dyskin, A. V. Materials and structures with macroscopic negative Poisson's ratio. International Journal of Engineering Science 52, 103-114 (2012).
39. Pei, Y. et al. Convergence of electronic bands for high performance bulk thermoelectrics. Nature 473, 66-69 (2011).
40. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758-1775 (1999).
41. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865-3868 (1996).
42. Kresse, G. & Furthmuler, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
43. Monkhorst, H. J. & Pack, J. D. Special points for brillouin-zone integrations. Phys. Rev. B 13, 5188-5192 (1976).
44. Klimes, J. C. V., Bowler, D. R. & Michaelides, A. Van der waals density functionals applied to solids. Phys. Rev. B 83, 195131 (2011).
45. Klimes, J., Bowler, D. R. & Michaelides, A. Chemical accuracy for the van der waals density functional. Journal of Physics: Condensed Matter 22, 022201 (2010).
46. Boulet, P. & Record, M.-C. Influence of the modified Becke-Johnson exchange potential on thermoelectric properties: Application to Mg2Si. J. Chem. Phys. 135, 234702 (2011).
47. Tran, F. & Blaha, P. Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential. Phys. Rev. Lett. 102, 226401 (2009).
48. Madsen, G. K. & Singh, D. J. BoltzTraP. a code for calculating band-structure dependent quantities. Comput. Phys. Commun. 175, 67-71 (2006).
49. Lee, M.-S. & Mahanti, S. D. Validity of the rigid band approximation in the study of the thermopower of narrow band gap semiconductors. Phys. Rev. B 85, 165149 (2012).
50. Parker, D. & Singh,D. J.High-temperature thermoelectric performance of heavily doped PbSe. Phys. Rev. B 82, 035204 (2010).
51. Pulikkotil, J. J. et al. Doping and temperature dependence of thermoelectric properties in Mg2(Si,Sn). Phys. Rev. B 86, 155204 (2012).
52. Ong, K. P., Singh, D. J. & Wu, P. Analysis of the thermoelectric properties of ntype ZnO. Phys. Rev. B 83, 115110 (2011).
53. Peng, H., Song, J.-H., Kanatzidis, M. G. & Freeman, A. J. Electronic structure and transport properties of doped PbSe. Phys. Rev. B 84, 125207 (2011).
54. Takagiwa, Y., Pei, Y., Pomrehn, G. & Jeffrey Snyder, G. Validity of rigid band approximation of PbTe thermoelectric materials. APL Materials 1, 011101 (2013).
55. Shuai, Z.,Wang, L. & Song, C. Deformation potential theory. In Theory of Charge Transport in Carbon Electronic Materials, SpringerBriefs in Molecular Science, 67-88 (Springer Berlin Heidelberg, 2012).
56. Lin, Z., Chen, L., Wang, L., Zhao, J. & Wu, L. A promising mid-temperature thermoelectric material candidate: Pb/Sn-codoped In4PbxSnySe3. Adv. Mater. 25, 4800-4806 (2013).
57. Slack, G. A. Thermal conductivity of elements with complex lattices: B, P, S. Phys. Rev. 139, A507-A515 (1965).