Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis

Nanotechnology

Volumn 24, Issue 41, 2013, Pages

  Garcia Nunez C ^a   Garcia Marin A ^a   Nanterne, P ^b   Piqueras, J ^a   Kung, P ^c   Pau, J L ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c UNIVERSITY OF ALABAMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT MECHANISM; CONDUCTING PROPERTIES; DEVICE PERFORMANCE; DIELECTRIC CAPPING LAYERS; DIELECTROPHORETIC FORCES; RESISTANCE INCREASE; SPECTRAL PHOTORESPONSE; ZNO NANOWIRES (NWS);

ALIGNMENT; ELECTROPHORESIS; NANOWIRES; ULTRAVIOLET DEVICES;

ZINC OXIDE;

EID: 84884652770     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/41/415702     Document Type: Article

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