Electronic junction control in a nanotube-semiconductor Schottky junction solar cell

Nano Letters

Volumn 10, Issue 12, 2010, Pages 5001-5005

  Wadhwa, Pooja ^a   Liu, Bo ^a   McCarthy, Mitchell A ^b   Wu, Zhuangchun ^a   Rinzler, Andrew G ^a  

^a University of Florida ^*  (United States)

^b University of Florida   (United States)

Author keywords

carbon nanotubes; crystalline silicon; electronic gating; Schottky junction; solar cell

Indexed keywords

BUILT-IN POTENTIAL; CRYSTALLINE SILICONS; DEPLETION LAYER; ELECTRONIC GATING; ELECTRONIC JUNCTIONS; JUNCTION INTERFACES; LOW DENSITY; N TYPE SILICON; POWER CONVERSION EFFICIENCIES; SCHOTTKY JUNCTIONS; SINGLE WALL CARBON NANOTUBES;

CARBON NANOTUBES; CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; FERMI LEVEL; MODULATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SOLAR CELLS; WALLS (STRUCTURAL PARTITIONS);

SEMICONDUCTOR JUNCTIONS;

EID: 78650120405     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103128a     Document Type: Article

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