SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 5, Issue 21, 2015, Pages 15795-15799

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

(6) Fu, Qi a Wang, Wenhui a Yang, Lei a Huang, Jian a Zhang, Jingyu b Xiang, Bin a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FLOW OF GASES; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

CONTROLLABLE SYNTHESIS; EXPERIMENTAL ANALYSIS; GROWTH PARAMETERS; HIGH RESOLUTION SCANNING TRANSMISSION ELECTRON MICROSCOPIES; REACTION TEMPERATURE; TRANSITION METAL DICHALCOGENIDES (TMD); TUNGSTEN DISULFIDE; TWO DIMENSIONAL (2 D);

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84922769122 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c5ra00210a Document Type: Article

Times cited : (74)

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