Investigation of H 2 /CH 4 mixed gas plasma post-etching process for ZnO:B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells

Applied Surface Science

Volumn 316, Issue 1, 2014, Pages 508-514

  Wang, Li ^a   Zhang, Xiaodan ^b   Zhao, Ying ^b   Yamada, Takuto ^a   Naito, Yusuke ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b NANKAI UNIVERSITY   (China)

Author keywords

Front contacts; LP MOCVD technique; Plasma post etching mechanism; Thin film solar cells; ZnO:B films

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; ECONOMIC AND SOCIAL EFFECTS; ETCHING; HALL MOBILITY; II-VI SEMICONDUCTORS; OPTICAL EMISSION SPECTROSCOPY; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; SUBSTRATES; THIN FILMS; ZINC OXIDE;

CHEMICAL-ETCHING PROCESS; ELECTRICAL PARAMETER; ETCHING MECHANISM; FABRICATION PROCESS; LP-MOCVD; POST-ETCHING PROCESS; SILICON-BASED THIN FILMS; SINGLE JUNCTION SOLAR CELLS;

THIN FILM SOLAR CELLS;

EID: 84922560995     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.07.181     Document Type: Article

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