Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

Thin Solid Films

Volumn 568, Issue 1, 2014, Pages 38-43

  Westra, J M ^a   Van Swaaij, R A C M M ^a   Sutta P ^b   Sharma, K ^c   Creatore, M ^c   Zeman, M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

A Si:H; In situ X ray diffraction; Polycrystalline silicon; Solid phase crystallization

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; DEPOSITION; GRAIN GROWTH; HYDROGENATION; METALLIC FILMS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTOR DOPING; SILICON; SILICON SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

A-SI:H; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; HYDROGENATED AMORPHOUS SILICON FILMS; IN-SITU X-RAY DIFFRACTION; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITIONS (PECVD); SOLID PHASE CRYSTALLIZATION; THIN FILM POLYCRYSTALLINE SILICON; THIN-FILM SILICON SOLAR CELLS;

AMORPHOUS SILICON;

EID: 84922450755     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.07.040     Document Type: Article

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