An addressable quantum dot qubit with fault-tolerant control-fidelity

Nature Nanotechnology

Volumn 9, Issue 12, 2014, Pages 981-985

  Veldhorst, M ^a   Hwang, J C C ^a   Yang, C H ^a   Leenstra, A W ^b   De Ronde, B ^b   Dehollain, J P ^a   Muhonen, J T ^a   Hudson, F E ^a   Itoh, K M ^c   Morello, A ^a   Dzurak, A S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSPINNING; FAULT TOLERANCE; MAGNETIC MOMENTS; NANOCRYSTALS; QUANTUM OPTICS; SEMICONDUCTOR QUANTUM DOTS; SPIN DYNAMICS;

FAULT TOLERANT CONTROL; FAULT-TOLERANT QUANTUM COMPUTING; LARGE-SCALE ARRAYS; MANUFACTURING TECHNOLOGIES; NITROGEN VACANCIES; ORDERS OF MAGNITUDE; QUANTUM COMPUTING; STRONG COUPLING;

QUBITS;

PHOSPHORUS; QUANTUM DOT; SILICON;

ACCELERATION; ARTICLE; ELECTRON; ELECTRON SPIN RESONANCE; FEEDBACK SYSTEM; LOW FREQUENCY NOISE; MAGNET; MICROWAVE RADIATION; OSCILLATION; PRIORITY JOURNAL; QUALITY CONTROL; SCANNING ELECTRON MICROSCOPE; SEMICONDUCTOR; SOLID STATE; TIME;

EID: 84921725378     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.216     Document Type: Article

References (30)

1. Loss, D. & DiVincenzo, D. P. Quantum computation with quantum dots. Phys. Rev. A 57, 120-126 (1998).
2. DiVincenzo, D. P. The physical implementation of quantum computation. Fortschr. Phys. 48, 771-783 (2000).
3. Awschalom, D. D., Bassett, L. C., Dzurak, A. S., Hu, E. L. & Petta, J. R. Quantum spintronics: engineering and manipulating atom-like spins in semiconductors. Science 339, 1174-1179 (2012).
4. Bar-Gill, N., Pham, L. M., Jarmola, A., Budker, D. &Walsworth, R. L. Solid-state electronic spin coherence time approaching one second. Nature Commun. 4, 1743 (2013).
5. Tyryshkin, A. M. et al. Electron spin coherence exceeding seconds in high-purity silicon. Nature Mater 11, 143-147 (2012).
6. Fuechsle, M. et al. A single-atom transistor. Nature Nanotech. 7, 242-246 (2012).
7. Knill, E. Quantum computing with realistically noisy devices. Nature 434, 39-44 (2005).
8. Fowler, A., Marlantoni, M., Martinis, J. M. & Cleland, A. N. Surface codes: towards practical large-scale quantum computation. Phys. Rev. A 86, 1-48 (2012).
9. Petta, J. R. et al. Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science 309, 2180-2184 (2005).
10. Nowack, K. C. et al. Single-shot correlations and two-qubit gate of solid-state spins. Science 333, 1269-1272 (2011).
11. Shulman, M. D. et al. Demonstration of entanglement of electrostatically coupled singlet-triplet qubits. Science 336, 202-205 (2012).
12. Koppens, F. H. L., Nowack, K. C. & Vandersypen, L. M. K. Spin echo of a single electron spin in a quantum dot. Phys. Rev. Lett. 100, 236802 (2008).
13. Bluhm, H., Foletti, S., Mahalu, D., Umansky, V. & Yacoby, A. Enhancing the coherence of a spin qubit by operating it as a feedback loop that controls its nuclear spin bath. Phys. Rev. Lett. 105, 216803 (2010).
14. Maune, B. M. et al. Coherent singlet-triplet oscillations in a silicon-based double quantum dot. Nature 481, 344-347 (2012).
15. Bluhm, H. et al. Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 s. Nature Phys. 7, 109-113 (2011).
16. Büch, H., Mahapatra, S., Rahman, R., Morello, A. & Simmons, M. Y. Spin readout and addressability of phosphorus-donor clusters in silicon. Nature Commun. 4, 2017 (2013).
17. Nadj-Perge, S., Frolov, S. M., Bakkers, E. P. A. M. & Kouwenhoven, L. P. Spin-orbit qubit in a semiconductor nanowire. Nature 468, 1084-1087 (2010).
18. Rahman, R. et al. Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors. Phys. Rev. B 80, 155301 (2009).
19. Angus, S. J., Ferguson, A. J., Dzurak, A. S. & Clark, R. G. Gate-defined quantum dots in intrinsic silicon. Nano Lett. 7, 2051-2055 (2007).
20. Fukatsu, S. et al. Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2. Appl. Phys. Lett. 83, 3897-3899 (2003).
21. Pla, J. J. et al. A single-atom electron spin qubit in silicon. Nature 489, 541-545 (2012).
22. Yang, C. H., Lim, W. H., Zwanenburg, F. A. & Dzurak, A. S. Dynamically controlled charge sensing of a few-electron silicon quantum dot. AIP Adv. 1, 042111 (2011).
23. Elzerman, J. M. et al. Single-shot read-out of an individual electron spin in a quantum dot. Nature 430, 431-435 (2004).
24. Koppens, F. H. L. et al. Driven coherent oscillations of a single electron spin in a quantum dot. Nature 442, 766-771 (2006).
25. Knill, E. et al. Randomized benchmarking of quantum gates. Phys. Rev. A 77, 012307 (2008).
26. Yang, C. H. et al. Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting. Nature Commun. 4, 2069 (2013).
27. Hao, X., Ruskov, R., Xiao, M., Tahan, C. & Jian, H. W. Electron spin resonance and spin-valley physics in a silicon double quantum dot. Nature Commun. 5, 3860 (2014).
28. Bradbury, F. R. et al. Stark tuning of donor electron spins in silicon. Phys. Rev. Lett. 97, 176404 (2006).
29. Muhonen, J. T. et al. Storing quantum information for 30 seconds in a nanoelectronic device. Preprint at http://arXiv.org/abs/1402.7140 (2014).
30. Kalra, R., Laucht, A., Hill, C. D. & Morello, A. Robust two-qubit gates for donors in silicon controlled by hyperfine interactions. Phys. Rev. X 4, 021044 (2014).