Strain-induced semiconductor to metal transition in few-layer black phosphorus from first principles

Chemical Physics Letters

Volumn 622, Issue , 2015, Pages 109-114

  Ju, Weiwei ^a   Li, Tongwei ^a   Wang, Hui ^a   Yong, Yongliang ^a   Sun, Jinfeng ^a  

^a HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; PHOSPHORUS;

BIAXIAL STRAINS; COMPRESSIVE STRAIN; FIRST PRINCIPLES; SEMICONDUCTOR-METAL TRANSITION; SEMICONDUCTOR-TO-METAL TRANSITIONS; STRAIN INDUCED;

TENSILE STRAIN;

EID: 84921710089     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2015.01.038     Document Type: Article

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