Structure characterization and strain relief analysis in CVD growth of boron phosphide on silicon carbide

Applied Surface Science

Volumn 327, Issue , 2015, Pages 7-12

  Li, Guoliang ^a   Abbott, Julia K C ^b   Brasfield, John D ^b   Liu, Peizhi ^a   Dale, Alexis ^b   Duscher, Gerd ^a,c   Rack, Philip D ^a,c   Feigerle, Charles S ^b  

^a University of Tennessee   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Boron phosphide; CVD; Defect; Neutron detection; Strain relief

Indexed keywords

BORON CARBIDE; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; DEFECTS; FILM GROWTH; GRAIN BOUNDARIES; III-V SEMICONDUCTORS; LATTICE MISMATCH; MICROSTRUCTURE; NEUTRON DETECTORS; SILICON CARBIDE; STACKING FAULTS; THICK FILMS;

BORON PHOSPHIDE; INTERFACE REGIONS; MATERIAL SYNTHESIS; MICRO-STRUCTURE EVOLUTIONS; NEUTRON DETECTION; STRAIN RELIEF; STRUCTURE CHARACTERIZATION; THERMAL NEUTRON DETECTORS;

EPITAXIAL GROWTH;

EID: 84921653842     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.11.037     Document Type: Article

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