Preparation and thermoelectric properties of BP films on SOI and sapphire substrates

Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 8, 2011, Pages 966-973

  Kumashiro, Y ^a   Nakamura, K ^b   Enomoto, T ^a   Tanaka, M ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b NIHON UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; CVD PROCESS; DEFECT CONCENTRATIONS; DEPOSITION TIME; DIRECT GROWTH; ELECTRICAL CONDUCTION; ELECTRICAL CONDUCTIVITY; EPITAXIALLY GROWN; SAPPHIRE SUBSTRATES; SI(1 0 0); SOI SUBSTRATES; TEMPERATURE RANGE; THERMOELECTRIC PROPERTIES; TWO-STEP GROWTH;

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; FILM GROWTH; PYROLYSIS; SAPPHIRE; SILICON COMPOUNDS; SUBSTRATES; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

FILM PREPARATION;

EID: 80051543888     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-010-0245-1     Document Type: Article

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