High-resolution TEM characterization of MOVPE-grown (1 1 1)-BP layer on hexagonal 6H (0 0 0 1)-SiC

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 285-288

  Udagawa, T ^a   Odawara, M ^a   Shimaoka, G ^b  

^a High Performance Materials Department   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Characterization; III V Semiconductors; Metalorganic chemical vapor deposition

Indexed keywords

CHARACTERIZATION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

AXIAL ORIENTATION; CUBIC CRYSTAL; DIFFRACTION SPOTS; III-V SEMICONDUCTORS;

SILICON CARBIDE;

EID: 15844371608     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.129     Document Type: Conference Paper

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