Crystallographic characterization of hetero-epitaxial growth manner of BP semiconductor on (111)-Si

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 120-122

  Yamashita, T ^a   Yamatake, K ^a   Odawara, M ^a   Udagawa, T ^b  

^a High Performance Materials Department   (Japan)

^b Technology Headquarters   (Japan)

Author keywords

Characterization; Epitaxy; Heterostructure; MOCVD; Semiconducting III V materials; Si

Indexed keywords

AGGLOMERATION; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

INCIDENT BEAMS; PHOSPHINES; SEMICONDUCTING III-V MATERIALS; TRANSMISSION ELECTRON DIFFRACTION (TED);

SEMICONDUCTING SILICON;

EID: 4544385256     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.080     Document Type: Article

References (3)

1. Popper P., Ingles T.A. Nature. 4569:1957 (May 25);1075.
2. Takenaka T., Takigawa M., Shohno K. J. Electrochem. Soc. 125:1978;632.
3. Nishinaga T., Ogawa H., Watanabe H., Arizumi T. J. Cryst. Growth. 13/14:1972;346.