Metal-etching-free direct delamination and transfer of single-layer graphene with a high degree of freedom

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Volumn 11, Issue 2, 2015, Pages 175-181

  Yang, Sang Yoon ^a   Oh, Joong Gun ^a   Jung, Dae Yool ^a   Choi, HongKyw ^b   Yu, Chan Hak ^a   Shin, Jongwoo ^a   Choi, Choon Gi ^b   Cho, Byung Jin ^a   Choi, Sung Yool ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DELAMINATION; ETCHING; GRAPHENE;

DEGREE OF FREEDOM; GROWTH SUBSTRATES; HIGH DEGREE OF FREEDOM; METAL ETCHING; SINGLE LAYER; TRANSFER METHOD; TRANSFER PROCESS;

DEGREES OF FREEDOM (MECHANICS);

EID: 84920512518     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201401196     Document Type: Article

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