New nanostructured materials for efficient photon upconversion

IEEE Journal of Photovoltaics

Volumn 5, Issue 1, 2015, Pages 224-228

  Sellers, Diane G ^a   Polly, Stephen J ^b   Zhong, Yujun ^a,c   Hubbard, Seth M ^b   Zide, Joshua M O ^a   Doty, Matthew F ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Bandgap engineering; dilute bismuthides; InAs quantum dots (QDs); upconversion

Indexed keywords

NANOSTRUCTURED MATERIALS; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM DOTS; TWO PHOTON PROCESSES;

BAND GAP ENGINEERING; CARRIER ESCAPE MECHANISM; DILUTE BISMUTHIDES; INAS QUANTUM DOTS; PHOTOCURRENT MEASUREMENT; PHOTON UP CONVERSIONS; TWO-PHOTON ABSORPTIONS; UP-CONVERSION;

PHOTONS;

EID: 84919913429     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2367865     Document Type: Article

References (24)

1. A. Luque, A. Marti, C. Stanley, N. López, L. Cuadra, D. Zhou, J. L. Pearson, and A. McKee, "General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence, " J. Appl. Phys., vol. 96, pp. 903-909, 2004.
2. N. López, L. A. Reichertz, K. M. Yu, K. Campman, and W. Walukiewicz, "Engineering the electronic band structure for multiband solar cells, "Phys. Rev. Lett., vol. 106, pp. 028701-1-028701-4, 2011.
3. M. J. Keevers and M. A. Green, "Efficiency improvements of silicon solar cells by the impurity photovoltaic effect, " J. Appl. Phys., vol. 75, pp. 4022-4031, 1994.
4. D. G. Sellers, S. Polly, S. M. Hubbard, and M. F. Doty, "Analyzing carrier escape mechanisms inInAs/GaAs quantum dot p-i-n junction photovoltaic cells, " Appl. Phys. Lett., vol. 104, pp. 223903-1-223903-4, 2014.
5. T. Trupke, M. Green, and P. Wurfel, "Improving solar cell efficiencies by up-conversion of sub-band-gap light, " J. Appl. Phys., vol. 92, no. 7, pp. 4117-4122, 2002.
6. A. Atre and J. Dionne, "Realistic upconverter-enhanced solar cells with non-ideal absorption and recombination efficiencies, " J. Appl. Phys., vol. 110, no. 3, pp. 034505-1-034505-9, 2011.
7. 4: Er3+/Yb3+ and Tm3+/Yb3+ monodisperse nanocrystals, " Nano Lett., vol. 7, pp. 847-852, 2007.
8. S. Fischer, J. C. Goldschmidt, P. Löper, G. H. Bauer, R. Brüggemann, K. Krämer, D. Biner, M. Hermle, and S. W. Glunz, "Enhancement of silicon solar cell efficiency by upconversion: Optical and electrical characterization, " J. Appl. Phys., vol. 108, pp. 044912-1-044912-11, 2010.
9. 4 nanocrystals, " Adv. Mater., vol. 16, pp. 2102-2015, 2004.
10. Z. Li, Y. Zhang, and S. Jiang, "Multicolor core/shell-structured upcon-version fluorescent nanoparticles, " Adv. Mater., vol. 20, pp. 4765-4769, 2008.
11. D. M. Tex and I. Kamiya, "Upconversion of infrared photons to visible luminescence using InAs-based quantum structures, " Phys. Rev. B, vol. 83, pp. 81309-1-81309-4, 2011.
12. X. Wang, W. W. Yu, J. Zhang, J. Aldana, X. Peng, and M. Xiao, "Photo-luminescence upconversion in colloidal CdTe quantum dots, " Phys. Rev. B Condens. Matter Mater. Phys., vol. 68, pp. 125318-1-125318-6, 2003.
13. C. M. Jaworski, B. Wiendlocha, V. Jovovic, and J. P. Heremans, "Combining alloy scattering of phonons and resonant electronic levels to reach a high thermoelectric figure of merit in PbTeSe and PbTeS alloys, " Energy Environ. Sci., vol. 4, pp. 4155-4162, 2011.
14. Y. Y. Cheng, T. Khoury, R. G. C. R. Clady, M. J. Y. Tayebjee, N. J. Ekins-Daukes, M. J. Crossley, and T. W. Schmidt, "On the efficiency limit of triplet-triplet annihilation for photochemical upconversion., " Phys. Chem. Chem. Phys., vol. 12, pp. 66-71, 2010.
15. T. N. Singh-Rachford and F. N. Castellano, "Photon upconversion based on sensitized triplet-triplet annihilation, " Coord. Chem. Rev., vol. 254, pp. 2560-2573, 2010.
16. A. Clark, D. Williams, E. Arkun, R. Smith, S. Semans, and A Jamora, "Design of a functional rare earth oxide up-conversion layer for bulk silicon cells, " in Proc. IEEE 35th Photovoltaic Spec. Conf., 2010, pp. 003327-003330.
17. Z. Li, Y. Zhang, and S. Jiang, "Multicolor core/shell-structured upcon-version fluorescent nanoparticles, " Adv. Mater., vol. 20, pp. 4765-4769, 2008.
18. D. Tex and I. Kamiya, "Upconversion of infrared photons to visible luminescence using InAs based quantum structures, " Phys. Rev. B, vol. 83, no. 8, pp. 81309-1-81309-4, 2011.
19. O. Rubel, P. Dawson, S. Baranovskii, P. Thomas, K. Pierz, and E. O. Goebel, "Nature and dynamicsof carrier escape from InAs/GaAs quantum dots, " Phys. Status Solidi C, vol. 3, no. 7, pp. 2397-2401, 2006.
20. S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, S. G. Bailey, and D. M. Wilt, "Effect of strain compensation on quantum dot enhanced GaAs solar cells, " Appl. Phys. Lett., vol. 92, pp. 123512-1-123512-3, 2008.
21. S. M. Hubbard, A. Podell, C. Mackos, S. Polly, C. G. Bailey, and D. V. Forbes, "Effect of vicinal substrates onthe growth and device performance of quantum dot solar cells, " Sol. Energy Mater. Sol. Cells., vol. 108, pp. 256-262, 2013.
22. R. Oshima, A. Takata, Y. Okada, "Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells, " Appl. Phys. Lett., vol. 93, pp. 083111-1-083111-3, 2008.
23. A. Marti, N. López, E. Antoĺin, E. Cánovas, A. Luque, C. R. Stanley, C. D. Farmer, P. Díaz, "Emitter degradation in quantum dot intermediate band solar cells, " Appl. Phys. Lett., vol. 90, pp. 233510-1-233510-3, 2007.
24. K. Alberi, J. Wu, W. Walukiewicz, K. Yu, and O. Dubon, "Valence-band anticrossing in mismatched III-V semiconductor alloys, " Phys. Rev. B, vol. 75, no. 4, pp. 1-6, 2007.