SCOPUS 정보 검색 플랫폼

Volumn 8, Issue 1, 2015, Pages 278-285

Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III-V photovoltaics

(6) Ritenour, Andrew J a Boucher, Jason W a Delancey, Robert a Greenaway, Ann L a Aloni, Shaul b Boettcher, Shannon W a

a UNIVERSITY OF OREGON (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; POWDER METALS; SEMICONDUCTOR DOPING;

CLOSE-SPACED VAPOR TRANSPORTS; CONVENTIONAL TECHNIQUES; ELECTRON-BEAM-INDUCED CURRENT; ELECTRONIC QUALITY; EPITAXIAL GAAS; MINORITY CARRIER DIFFUSION LENGTH; PHOTOELECTROCHEMICALS; PHOTOVOLTAIC APPLICATIONS;

SEMICONDUCTING GALLIUM;

ELECTROCHEMICAL METHOD; ELECTRONIC EQUIPMENT; MOBILITY; PERFORMANCE ASSESSMENT; PHOTOVOLTAIC SYSTEM; VAPOR PRESSURE;

EID: 84919663952 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c4ee01943a Document Type: Article

Times cited : (29)

References (61)

1
- 84865266413
- O. D. Miller E. Yablonovitch S. R. Kurtz IEEE J. Photovolt. 2012 2 303 311
- (2012) IEEE J. Photovolt. , vol.2 , pp. 303-311
- Miller, O.D.¹ Yablonovitch, E.² Kurtz, S.R.³

2
- 84919666502
- W. Xufeng M. R. Khan J. L. Gray M. A. Alam M. S. Lundstrom IEEE J. Photovolt. 2013 3 737 744
- (2013) IEEE J. Photovolt. , vol.3 , pp. 737-744
- Xufeng, W.¹ Khan, M.R.² Gray, J.L.³ Alam, M.A.⁴ Lundstrom, M.S.⁵

3
- 84869430064
- L. S. Mattos, S. R. Scully, M. Syfu, E. Olson, Y. Linlin, C. Ling, B. M. Kayes and H. Gang, Proc. 38th IEEE Photovolt. Spec. Conf., 2012, pp. 3187-3190
- (2012) Proc. 38th IEEE Photovolt. Spec. Conf. , pp. 3187-3190
- Mattos, L.S.¹ Scully, S.R.² Syfu, M.³ Olson, E.⁴ Linlin, Y.⁵ Ling, C.⁶ Kayes, B.M.⁷ Gang, H.⁸

4
- 84890528891
- M. A. Green K. Emery Y. Hishikawa W. Warta E. D. Dunlop Prog. Photovoltaics 2014 22 1 9
- (2014) Prog. Photovoltaics , vol.22 , pp. 1-9
- Green, M.A.¹ Emery, K.² Hishikawa, Y.³ Warta, W.⁴ Dunlop, E.D.⁵

5
- 84869387757
- E. Yablonovitch, O. D. Miller and S. R. Kurtz, Proc. 38th IEEE Photovolt. Spec. Conf., 2012, pp. 1556-1559
- (2012) Proc. 38th IEEE Photovolt. Spec. Conf. , pp. 1556-1559
- Yablonovitch, E.¹ Miller, O.D.² Kurtz, S.R.³

6
- 33846360365
- M. Bosi C. Pelosi Prog. Photovoltaics 2007 15 51 68
- (2007) Prog. Photovoltaics , vol.15 , pp. 51-68
- Bosi, M.¹ Pelosi, C.²

7
- 0024072721
- G. Perrier R. Philippe J. P. Dodelet J. Mater. Res. 1988 3 1031 1042
- (1988) J. Mater. Res. , vol.3 , pp. 1031-1042
- Perrier, G.¹ Philippe, R.² Dodelet, J.P.³

8
- 84964893149
- F. H. Nicoll J. Electrochem. Soc. 1963 110 1165 1167
- (1963) J. Electrochem. Soc. , vol.110 , pp. 1165-1167
- Nicoll, F.H.¹

9
- 0042930911
- E. Sirtl J. Phys. Chem. Solids 1963 24 1285 1289
- (1963) J. Phys. Chem. Solids , vol.24 , pp. 1285-1289
- Sirtl, E.¹

10
- 0041929212
- P. Robinson RCA Rev. 1963 24 574 584
- (1963) RCA Rev. , vol.24 , pp. 574-584
- Robinson, P.¹

11
- 0032672161
- M. Hammadi J. C. Bourgoin H. Samic J. Mater. Sci.: Mater. Electron. 1999 10 399 402
- (1999) J. Mater. Sci.: Mater. Electron. , vol.10 , pp. 399-402
- Hammadi, M.¹ Bourgoin, J.C.² Samic, H.³

12
- 0035335114
- M. G. Mauk B. W. Feyock J. E. Cotter J. Cryst. Growth 2001 225 528 533
- (2001) J. Cryst. Growth , vol.225 , pp. 528-533
- Mauk, M.G.¹ Feyock, B.W.² Cotter, J.E.³

13
- 0035335374
- M. G. Mauk A. N. Tata B. W. Feyock J. Cryst. Growth 2001 225 359 365
- (2001) J. Cryst. Growth , vol.225 , pp. 359-365
- Mauk, M.G.¹ Tata, A.N.² Feyock, B.W.³

14
- 0013362557
- S. R. Kurtz R. McConnell AIP Conf. Proc. 1997 404 191 205
- (1997) AIP Conf. Proc. , vol.404 , pp. 191-205
- Kurtz, S.R.¹ McConnell, R.²

15
- 84919647686
- R. Venkatasubramanian B. O'Quinn E. Siivola AIP Conf. Proc. 1997 394 259 270
- (1997) AIP Conf. Proc. , vol.394 , pp. 259-270
- Venkatasubramanian, R.¹ O'Quinn, B.² Siivola, E.³

16
- 0026737029
- S. M. Vernon, S. P. Tobin, V. E. Haven, L. M. Geoffroy and M. M. Sanfacon, Proc. 22nd IEEE Photovolt. Spec. Conf., 1991, vol. 351, pp. 353-357
- (1991) Proc. 22nd IEEE Photovolt. Spec. Conf. , vol.351 , pp. 353-357
- Vernon, S.M.¹ Tobin, S.P.² Haven, V.E.³ Geoffroy, L.M.⁴ Sanfacon, M.M.⁵

17
- 0037370275
- M. G. Mauk J. R. Balliet B. W. Feyock J. Cryst. Growth 2003 250 50 56
- (2003) J. Cryst. Growth , vol.250 , pp. 50-56
- Mauk, M.G.¹ Balliet, J.R.² Feyock, B.W.³

18
- 0003620818
- Wiley-VCH Verlag GmbH
- M. G. Astles, Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and their Device Applications, Wiley-VCH Verlag GmbH, 1990
- (1990) Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications
- Astles, M.G.¹

19
- 0031365457
- M. G. Mauk, B. W. Feyock, R. B. Hall, K. D. Cavanaugh and J. E. Cotter, Proc. 26th IEEE Photovolt. Spec. Conf., 1997, pp. 511-514
- (1997) Proc. 26th IEEE Photovolt. Spec. Conf. , pp. 511-514
- Mauk, M.G.¹ Feyock, B.W.² Hall, R.B.³ Cavanaugh, K.D.⁴ Cotter, J.E.⁵

20
- 0035921471
- F. Silva-Andrade A. Ilinskii F. Chavez T. Prutskij F. Tenorio Y. Bravo-Garcia R. Pena-Sierra Mod. Phys. Lett. B 2001 15 752 755
- (2001) Mod. Phys. Lett. B , vol.15 , pp. 752-755
- Silva-Andrade, F.¹ Ilinskii, A.² Chavez, F.³ Prutskij, T.⁴ Tenorio, F.⁵ Bravo-Garcia, Y.⁶ Pena-Sierra, R.⁷

21
- 0344662570
- P. A. Hoss L. Murray J. Rivera J. Electrochem. Soc. 1968 115 553 556
- (1968) J. Electrochem. Soc. , vol.115 , pp. 553-556
- Hoss, P.A.¹ Murray, L.² Rivera, J.³

22
- 84869427002
- A. J. Ritenour and S. W. Boettcher, Proc. 38th IEEE Photovolt. Spec. Conf., 2012, pp. 913-917
- (2012) Proc. 38th IEEE Photovolt. Spec. Conf. , pp. 913-917
- Ritenour, A.J.¹ Boettcher, S.W.²

23
- 84856267973
- A. J. Ritenour R. C. Cramer S. Levinrad S. W. Boettcher ACS Appl. Mater. Interfaces 2012 4 69 73
- (2012) ACS Appl. Mater. Interfaces , vol.4 , pp. 69-73
- Ritenour, A.J.¹ Cramer, R.C.² Levinrad, S.³ Boettcher, S.W.⁴

24
- 0041405148
- C. M. Gronet N. S. Lewis Appl. Phys. Lett. 1983 43 115 117
- (1983) Appl. Phys. Lett. , vol.43 , pp. 115-117
- Gronet, C.M.¹ Lewis, N.S.²

25
- 34250502571
- R. Purohit J. Mater. Sci. 1968 3 330 332
- (1968) J. Mater. Sci. , vol.3 , pp. 330-332
- Purohit, R.¹

26
- 0018430047
- W. Walukiewicz L. Lagowski L. Jastrzebski M. Lichtensteiger H. C. Gatos J. Appl. Phys. 1979 50 899 908
- (1979) J. Appl. Phys. , vol.50 , pp. 899-908
- Walukiewicz, W.¹ Lagowski, L.² Jastrzebski, L.³ Lichtensteiger, M.⁴ Gatos, H.C.⁵

27
- 0000534150
- M. Sotoodeh A. Khalid A. Rezazadeh J. Appl. Phys. 2000 87 2890 2900
- (2000) J. Appl. Phys. , vol.87 , pp. 2890-2900
- Sotoodeh, M.¹ Khalid, A.² Rezazadeh, A.³

28
- 84919653545
- J. W. Boucher A. J. Ritenour S. W. Boettcher Proc. SPIE 2013 87250Z
- (2013) Proc. SPIE , pp. 87250Z
- Boucher, J.W.¹ Ritenour, A.J.² Boettcher, S.W.³

29
- 84889376538
- Wiley-VCH
- Crystal Growth Technology, ed., H. J. Scheel, and, P. Capper, Wiley-VCH, 2008
- (2008) Crystal Growth Technology
- Scheel, H.J.¹ Capper, P.²

30
- 0016519711
- V. Rideout Solid-State Electron. 1975 18 541 550
- (1975) Solid-State Electron. , vol.18 , pp. 541-550
- Rideout, V.¹

31
- 0033706013
- L. G. Casagrande A. Juang N. S. Lewis J. Phys. Chem. B 2000 104 5436 5447
- (2000) J. Phys. Chem. B , vol.104 , pp. 5436-5447
- Casagrande, L.G.¹ Juang, A.² Lewis, N.S.³

32
- 0342537355
- F. R. F. Fan A. J. Bard J. Am. Chem. Soc. 1980 102 3677 3683
- (1980) J. Am. Chem. Soc. , vol.102 , pp. 3677-3683
- Fan, F.R.F.¹ Bard, A.J.²

33
- 0018289952
- P. A. Kohl A. J. Bard J. Electrochem. Soc. 1979 126 59 67
- (1979) J. Electrochem. Soc. , vol.126 , pp. 59-67
- Kohl, P.A.¹ Bard, A.J.²

34
- 84883252133
- A. J. Ritenour S. Levinrad C. Bradley R. C. Cramer S. W. Boettcher ACS Nano 2013 6840 6849
- (2013) ACS Nano , pp. 6840-6849
- Ritenour, A.J.¹ Levinrad, S.² Bradley, C.³ Cramer, R.C.⁴ Boettcher, S.W.⁵

35
- 0001538106
- K. E. Pomykal A. M. Fajardo N. S. Lewis J. Phys. Chem. 1995 99 8302 8310
- (1995) J. Phys. Chem. , vol.99 , pp. 8302-8310
- Pomykal, K.E.¹ Fajardo, A.M.² Lewis, N.S.³

36
- 34147165106
- K. Gelderman L. Lee S. Donne J. Chem. Educ. 2007 84 685
- (2007) J. Chem. Educ. , vol.84 , pp. 685
- Gelderman, K.¹ Lee, L.² Donne, S.³

37
- 0004005306
- John Wiley & Sons, New York
- S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

38
- 0000400594
- L. Van der Pauw Philips Tech. Rev. 1958 20 220 224
- (1958) Philips Tech. Rev. , vol.20 , pp. 220-224
- Van Der Pauw, L.¹

39
- 0003698310
- Wiley New York
- R. G. Wilson, F. A. Stevie and C. W. Magee, Secondary ion mass spectrometry: a practical handbook for depth profiling and bulk impurity analysis, Wiley New York, 1989
- (1989) Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis
- Wilson, R.G.¹ Stevie, F.A.² Magee, C.W.³

40
- 0019688694
- B. Akamatsu J. Henoc P. Henoc J. Appl. Phys. 1981 52 7245 7250
- (1981) J. Appl. Phys. , vol.52 , pp. 7245-7250
- Akamatsu, B.¹ Henoc, J.² Henoc, P.³

41
- 36549094911
- B. J. Skromme C. J. Sandroff E. Yablonovitch T. Gmitter Appl. Phys. Lett. 1987 51 2022 2024
- (1987) Appl. Phys. Lett. , vol.51 , pp. 2022-2024
- Skromme, B.J.¹ Sandroff, C.J.² Yablonovitch, E.³ Gmitter, T.⁴

42
- 0008967726
- J. Bourgoin D. Stievenard D. Deresmes J. Mimila Arroyo J. Appl. Phys. 1991 69 284 290
- (1991) J. Appl. Phys. , vol.69 , pp. 284-290
- Bourgoin, J.¹ Stievenard, D.² Deresmes, D.³ Mimila Arroyo, J.⁴

43
- 0342840988
- C. Le Bel D. Cossement J. P. Dodelet R. Leonelli Y. DePuydt P. Bertrand J. Appl. Phys. 1993 73 1288 1296
- (1993) J. Appl. Phys. , vol.73 , pp. 1288-1296
- Le Bel, C.¹ Cossement, D.² Dodelet, J.P.³ Leonelli, R.⁴ Depuydt, Y.⁵ Bertrand, P.⁶

44
- 0024647242
- E. Koskiahde D. Cossement R. Paynter J. P. Dodelet A. Jean B. A. Lombos Can. J. Phys. 1989 67 251 258
- (1989) Can. J. Phys. , vol.67 , pp. 251-258
- Koskiahde, E.¹ Cossement, D.² Paynter, R.³ Dodelet, J.P.⁴ Jean, A.⁵ Lombos, B.A.⁶

45
- 84912130078
- G. Gottlieb J. Electrochem. Soc. 1965 112 192 196
- (1965) J. Electrochem. Soc. , vol.112 , pp. 192-196
- Gottlieb, G.¹

46
- 0026123619
- D. Cossement J. P. Dodelet T. Bretagnon A. Jean B. A. Lombos J. Electrochem. Soc. 1991 138 830 834
- (1991) J. Electrochem. Soc. , vol.138 , pp. 830-834
- Cossement, D.¹ Dodelet, J.P.² Bretagnon, T.³ Jean, A.⁴ Lombos, B.A.⁵

47
- 0343680835
- L. G. Casagrande B. J. Tufts N. S. Lewis J. Phys. Chem. 1991 95 1373 1380
- (1991) J. Phys. Chem. , vol.95 , pp. 1373-1380
- Casagrande, L.G.¹ Tufts, B.J.² Lewis, N.S.³

48
- 0001135290
- D. L. Rode S. Knight Phys. Rev. B: Solid State 1971 3 2534 2541
- (1971) Phys. Rev. B: Solid State , vol.3 , pp. 2534-2541
- Rode, D.L.¹ Knight, S.²

49
- 0004237593
- Cambridge Univ Press
- E. F. Schubert, Doping in III-V semiconductors, Cambridge Univ Press, 1993
- (1993) Doping in III-V Semiconductors
- Schubert, E.F.¹

50
- 79952744163
- Oxfort University Press
- G. K. Schweitzer and L. L. Pesterfield, The Aqueous Chemistry of the Elements, Oxfort University Press, 2010
- (2010) The Aqueous Chemistry of the Elements
- Schweitzer, G.K.¹ Pesterfield, L.L.²

51
- 0002806345
- W. W. Gärtner Phys. Rev. 1959 116 84
- (1959) Phys. Rev. , vol.116 , pp. 84
- Gärtner, W.W.¹

52
- 0024641410
- B. J. Tufts I. L. Abrahams L. G. Casagrande N. S. Lewis J. Phys. Chem. 1989 93 3260 3269
- (1989) J. Phys. Chem. , vol.93 , pp. 3260-3269
- Tufts, B.J.¹ Abrahams, I.L.² Casagrande, L.G.³ Lewis, N.S.⁴

53
- 79953650747
- C. Xiang G. M. Kimball R. L. Grimm B. S. Brunschwig H. A. Atwater N. S. Lewis Energy Environ. Sci. 2011 4 1311 1318
- (2011) Energy Environ. Sci. , vol.4 , pp. 1311-1318
- Xiang, C.¹ Kimball, G.M.² Grimm, R.L.³ Brunschwig, B.S.⁴ Atwater, H.A.⁵ Lewis, N.S.⁶

54
- 0003539448
- John Wiley & Sons, 1st edn
- S. Adachi, Physical Properties of III-V Semiconductor Compounds, John Wiley & Sons, 1st edn, 1992
- (1992) Physical Properties of III-V Semiconductor Compounds
- Adachi, S.¹

55
- 0004040706
- Academic Press, Inc.
- Handbook of Optical Constants of Solids, ed., E. D. Palik, Academic Press, Inc., 1985
- (1985) Handbook of Optical Constants of Solids
- Palik, E.D.¹

56
- 0012708014
- S. R. Lunt G. N. Ryba P. G. Santangelo N. S. Lewis J. Appl. Phys. 1991 70 7449 7467
- (1991) J. Appl. Phys. , vol.70 , pp. 7449-7467
- Lunt, S.R.¹ Ryba, G.N.² Santangelo, P.G.³ Lewis, N.S.⁴

57
- 0004242004
- IET
- M. R. Brozel and G. Stillman, Properties of gallium arsenide, IET, 1996
- (1996) Properties of Gallium Arsenide
- Brozel, M.R.¹ Stillman, G.²

58
- 84872107188
- E. Fahrenkrug J. Gu S. Maldonado J. Am. Chem. Soc. 2012 135 330 339
- (2012) J. Am. Chem. Soc. , vol.135 , pp. 330-339
- Fahrenkrug, E.¹ Gu, J.² Maldonado, S.³

59
- 84919656934
- J. W. Boucher, A. J. Ritenour, A. L. Greenaway, S. Aloni and S. W. Boettcher, Proc. 40th IEEE Photovolt. Spec. Conf., 2014
- (2014) Proc. 40th IEEE Photovolt. Spec. Conf.
- Boucher, J.W.¹ Ritenour, A.J.² Greenaway, A.L.³ Aloni, S.⁴ Boettcher, S.W.⁵

60
- 84889780442
- J. Faucher A. Gerger S. Tomasulo C. Ebert A. Lochtefeld A. Barnett M. Lee Appl. Phys. Lett. 2013 103 191901
- (2013) Appl. Phys. Lett. , vol.103 , pp. 191901
- Faucher, J.¹ Gerger, A.² Tomasulo, S.³ Ebert, C.⁴ Lochtefeld, A.⁵ Barnett, A.⁶ Lee, M.⁷

61
- 84869448609
- K. J. Schmieder, A. Gerger, M. Diaz, Z. Pulwin, C. Ebert, A. Lochtefeld, R. Opila and A. Barnett, Proc. 38th IEEE Photovolt. Spec. Conf., 2012, pp. 968-973
- (2012) Proc. 38th IEEE Photovolt. Spec. Conf. , pp. 968-973
- Schmieder, K.J.¹ Gerger, A.² Diaz, M.³ Pulwin, Z.⁴ Ebert, C.⁵ Lochtefeld, A.⁶ Opila, R.⁷ Barnett, A.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.