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Volumn , Issue , 2012, Pages 968-973

Analysis of tandem III-V/SiGe devices grown on Si

Author keywords

III V semiconductor materials; photovoltaic cells; semiconductor device modeling; semiconductor growth

Indexed keywords

DEVICE MODELS; TANDEM DEVICES;

EID: 84869448609     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317764     Document Type: Conference Paper
Times cited : (28)

References (14)
  • 4
    • 84865172446 scopus 로고    scopus 로고
    • Metamorphic GaAsP and InGaP solar cells on GaAs
    • IEEE Journal of
    • S. Tomasulo, K. N. Yaung, and M. L. Lee, "Metamorphic GaAsP and InGaP solar cells on GaAs," Photovoltaics, IEEE Journal of, Vol. 2, no. 1, pp. 56-61, 2012.
    • (2012) Photovoltaics , vol.2 , Issue.1 , pp. 56-61
    • Tomasulo, S.1    Yaung, K.N.2    Lee, M.L.3
  • 13
    • 9944260097 scopus 로고    scopus 로고
    • High-efficiency III-V multijunction solar cells
    • (A. Luque and S. Hegedus, eds.), ch. 9 Wiley, first ed., July
    • J. M. Olson, D. J. Friedman, and S. R. Kurtz, "High-efficiency III-V multijunction solar cells," in Handbook of Photovoltaic Science and Engineering (A. Luque and S. Hegedus, eds.), ch. 9, pp. 359-411, Wiley, first ed., July 2003.
    • (2003) Handbook of Photovoltaic Science and Engineering , pp. 359-411
    • Olson, J.M.1    Friedman, D.J.2    Kurtz, S.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.