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Volumn 225, Issue 2-4, 2001, Pages 528-533

GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour

Author keywords

A3. Selective epitaxy; A3. Vapor phase epitaxy; B2. Semi conducting III V materials; B2. Semiconducting silicon

Indexed keywords

FILM GROWTH; MASKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICON WAFERS; VAPOR PHASE EPITAXY; VAPORS;

EID: 0035335114     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00947-2     Document Type: Conference Paper
Times cited : (12)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.