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Volumn 225, Issue 2-4, 2001, Pages 528-533
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GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour
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Author keywords
A3. Selective epitaxy; A3. Vapor phase epitaxy; B2. Semi conducting III V materials; B2. Semiconducting silicon
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Indexed keywords
FILM GROWTH;
MASKS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SILICON WAFERS;
VAPOR PHASE EPITAXY;
VAPORS;
CLOSED SPACED VAPOR TRANSPORT (CSVT) PROCESSES;
CONFORMAL HETEROEPITAXY;
SELECTIVE HETEROEPITAXY;
SEMICONDUCTING FILMS;
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EID: 0035335114
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00947-2 Document Type: Conference Paper |
Times cited : (12)
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References (19)
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