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Volumn 15, Issue 17-19, 2001, Pages 752-755

Growth and characterization of GaAs p-n junctic obtained by the CSVT technique using atomic hydrogen

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; HYDROGEN; TELLURIUM; VOLATILE AGENT;

EID: 0035921471     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984901002464     Document Type: Conference Paper
Times cited : (3)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.