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Volumn 15, Issue 17-19, 2001, Pages 752-755
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Growth and characterization of GaAs p-n junctic obtained by the CSVT technique using atomic hydrogen
a a a a a a b |
Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC;
GALLIUM;
HYDROGEN;
TELLURIUM;
VOLATILE AGENT;
CONFERENCE PAPER;
DIODE;
ELECTRIC CONDUCTIVITY;
ELEMENTARY PARTICLE;
ENERGY;
FILM;
LIGHT EMITTING DIODE;
PHOTOGRAPHY;
PHOTOLUMINESCENCE;
RADIATION;
SEMICONDUCTOR;
TECHNIQUE;
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EID: 0035921471
PISSN: 02179849
EISSN: None
Source Type: Journal
DOI: 10.1142/S0217984901002464 Document Type: Conference Paper |
Times cited : (3)
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References (4)
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