SCOPUS 정보 검색 플랫폼

Volumn 7, Issue 3, 2015, Pages 936-946

Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor

(8) Lee, Seung Hyun a Lee, Hyomin a,b Jin, Tianguang a Park, Sungmin a Yoon, Byung Jun b Sung, Gun Yong c Kim, Ki Bum a Kim, Sung Jae a

a Seoul National University (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

c Hallym University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIAGNOSIS; MOLECULES;

CAPACITANCE CALCULATION; ELECTROLYTIC CONCENTRATION; EXPERIMENTAL AND NUMERICAL VALIDATIONS; FRINGING FIELD EFFECTS; MEDICAL DIAGNOSIS SYSTEM; NON-LINEAR CONSTRAINTS; POINT-OF-CARE SYSTEMS; POISSON-NERNST-PLANCK;

FIELD EFFECT TRANSISTORS;

EID: 84919633867 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr04089a Document Type: Article

Times cited : (48)

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