CMOS compatible route for GaAs based large scale flexible and transparent electronics

Proceedings of the IEEE Conference on Nanotechnology

Volumn , Issue , 2014, Pages 835-838

  Nour, Maha ^a   Ghoneim, Mohamed ^a   Droopad, Ravi ^b   Hussain, Muhammad M ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b TEXAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY GAP; GALLIUM ARSENIDE; HYDROFLUORIC ACID; NANOELECTRONICS; SEMICONDUCTING GALLIUM;

BATCH FABRICATION; CMOS COMPATIBLE; DILUTED HYDROFLUORIC ACIDS; ELECTRONIC CIRCUITRY; FLEXIBLE AND TRANSPARENT ELECTRONICS; HIGH ELECTRON MOBILITY; RELEASE PROCESS; STATE OF THE ART;

FLEXIBLE ELECTRONICS;

EID: 84919475357     PISSN: None     EISSN: 19449399     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2014.6968018     Document Type: Conference Paper

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