Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals

Applied Physics Letters

Volumn 105, Issue 24, 2014, Pages

  Valenta, J ^a   Greben, M ^a   Gutsch, S ^b   Hiller, D ^b   Zacharias, M ^b  

^a CHARLES UNIVERSITY   (Czech Republic)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM YIELD; SILICON OXIDES; TEMPERATURE DISTRIBUTION;

CARRIER MULTIPLICATION; EXCITATION WAVELENGTH; INTERLAYER BARRIERS; LUMINESCENCE QUANTUM YIELDS; NONRADIATIVE CENTERS; SILICON NANOCRYSTALS; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED;

NANOCRYSTALS;

EID: 84919340792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4904472     Document Type: Article

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