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Volumn 90, Issue 23, 2014, Pages

Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO3/ SrTiO3 interface

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EID: 84918503784     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.90.235426     Document Type: Article
Times cited : (65)

References (35)
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    • See Supplemental Material at for calculations of the charge induced in side gate devices of various dimensions.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.