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Applied Physics Letters

Volumn 103, Issue 10, 2013, Pages

Transistor operation and mobility enhancement in top-gated LaAlO 3/SrTiO3 heterostructures

(4) Hosoda, Masayuki a,b Hikita, Yasuyuki a Hwang, Harold Y a,c Bell, Christopher a

a SLAC NATIONAL ACCELERATOR LABORATORY (United States)

b UNIVERSITY OF TOKYO (Japan)

c STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION MODES; JUNCTION FIELD-EFFECT TRANSISTORS; LOWER DENSITY; MOBILITY ENHANCEMENT; ROOM TEMPERATURE; SHEET CARRIER DENSITIES; TRANSISTOR CHARACTERISTICS; TRANSISTOR OPERATION;

ELECTRON GAS; FIELD EFFECT TRANSISTORS; STRONTIUM TITANATES; TEMPERATURE MEASUREMENT;

LANTHANUM ALLOYS;

EID: 84884261048 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4820449 Document Type: Article

Times cited : (78)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.