Comparing electron recombination via interfacial modifications in dye-sensitized solar cells

ACS Applied Materials and Interfaces

Volumn 6, Issue 23, 2014, Pages 20978-20984

  Li, Luping ^a   Chen, Shikai ^a   Xu, Cheng ^a   Zhao, Yang ^a   Rudawski, Nicholas G ^b   Ziegler, Kirk J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

atomic layer deposition; blocking layer; dye sensitized solar cell; electron recombination; trap states

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRONS; ENERGY BARRIERS; HAFNIUM OXIDES; OXIDE MINERALS; TIN OXIDES; TITANIUM DIOXIDE;

BLOCKING LAYERS; DEVICE PERFORMANCE; EFFECTIVE APPROACHES; ELECTRON LIFETIME; ELECTRON RECOMBINATIONS; INTERFACIAL MODIFICATION; TIN DOPED INDIUM OXIDE; TRAP STATE;

DYE-SENSITIZED SOLAR CELLS;

EID: 84917741502     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am505742y     Document Type: Article

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