Structure Assignment, Electronic Properties, and Magnetism Quenching of Endohedrally Doped Neutral Silicon Clusters, Sin Co (n = 10-12)

Journal of Physical Chemistry A

Volumn 118, Issue 37, 2014, Pages 8198-

  Li, Yejun ^a   Tam, Nguyen Minh ^b   Claes, Pieterjan ^a,e   Woodham, Alex P ^c   Lyon, Jonathan T ^d   Ngan, Vu Thi ^b,f   Nguyen, Minh Tho ^b   Lievens, Peter ^a   Fielicke, André ^c   Janssens, Ewald ^a  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d CLAYTON STATE UNIVERSITY   (United States)

^e UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^f Quy Nhon University   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHARGE TRANSFER; COBALT; COBALT COMPOUNDS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MAGNETIC MOMENTS; SILICON; SPECTROSCOPY;

CALCULATED SPECTRUM; DOUBLE LAYERED STRUCTURE; INFRARED SPECTRUM; IONIC INTERACTION; LOCAL MAGNETIC MOMENTS; LOW ENERGY STRUCTURES; SILICON CLUSTERS; THEORETICAL STUDY;

CRYSTAL ATOMIC STRUCTURE;

EID: 84915828738     PISSN: 10895639     EISSN: 15205215     Source Type: Journal    
DOI: 10.1021/jp500928t     Document Type: Article

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