Study on transmission characteristics of carbon nanotube through silicon via interconnect

IEEE Microwave and Wireless Components Letters

Volumn 24, Issue 12, 2014, Pages 830-832

  Qian, Libo ^a   Zhu, Zhangming ^b   Xia, Yinshui ^a  

^a NINGBO UNIVERSITY   (China)

^b XIDIAN UNIVERSITY   (China)

Author keywords

Air gap; CNT TSV; signal loss; transmission characteristics

Indexed keywords

EID: 84914094340     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2014.2361429     Document Type: Article

References (16)

1. T. Wang, K. Jeppson, N. Olofsson, E. B. Campbell, and J. H. Liu, "Througn silicon vias filled with planarized carbon nanotube bundles," Nanotechnology, vol. 20, no. 48, p. 485203, Dec. 2009.
2. C. Xu, H. Li, R. Suaya, and K. Banerjee, "Compact AC modeling and performance analysis of through silicon vias in 3-D ICs," IEEE Trans. Electron Devices, vol. 57, no. 12, pp. 3405-3417, Dec. 2010.
3. A. G. Chiariello, A. Maffucci, and G. Miano, "Electrical behavior of carbon nanotube through silicon vias," in Proc. IEEE SPI, 2011, pp. 75-78.
4. K. Kannan, S. Kannan, B. Kim, and S. B. Cho, "Development of hybrid electrical model for CNT based through silicon vias," in Proc. IEEE Int. Symp. Circ., Syst., 2013, pp. 1022-1026.
5. D. Mecarelli, T. Rozzi, C. Camilloni, L. Maccari, and L. Pierantoni, "Modeling of multi-wall CNT devices by self-consistent analysis of multichannel transport," Nanotechnology, vol. 19, p. 165202, 2008.
6. A. Naeemi and J. D. Meindl, "Design and performance modeling for single walled carbon nanotube as local, semiglobal, and global interconnects in gigascale integrated systems," IEEE Trans. Electron Devices., vol. 54, no. 1, pp. 26-36, Jan. 2007.
7. T.Wang, K. Jeppson, L. L.Ye, and J.H. Liu, "Carbon nanotube through silicon via interconnects for three dimensional integration," Small, vol. 7, no. 16, pp. 2313-2317, Aug. 2011.
8. A. Nieuwoudt and Y.Massoud Y, "Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnects using diameterdependent modeling techniques," IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2460-2466, Oct. 2006.
9. A. Naeemi and J. D. Meindl, "Performance modeling for single-and multiwall carbon nanotubes as signal and power interconnects in gigascale systems," IEEE Trans. Electron Devices, vol. 55, no. 10, pp. 2574-2582, Oct. 2008.
10. P. J. Burke, "Luttinger liquid theory as a model of the gigahertz electrical properties of carbon nanotubes," IEEE Trans. Nanotechnol., vol. 1, no. 3, pp. 129-144, Mar. 2001.
11. A. Naeemi and J. D. Meindl, "Performance comparison between carbon nanotube and copper interconnect for gigascale integration (GSI)," IEEE Electron Device Lett., vol. 26, no. 2, pp. 84-86, Feb. 2009.
12. G. Katti, M. Stucchi, K. D. Meyer, and W. Dehaene, "Electron modeling and characterization of through silicon via for three-dimensional ICs," IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 256-262, Jan. 2010.
13. W. H. Hayt and J. A. Buck, Engineering Electromagnetics, 6th ed. New York: McGraw-Hill, 2001, pp. 157-162.
14. K. Banerjee and A. Mehrotra, "Analysis of on chip inductance effects for distributed RLC interconnects," IEEE Trans. Computer-Aided Design, vol. 21, no. 8, pp. 904-915, Aug. 2002.
15. E. X. Liu, E. P. Li, H.M. Lee, and S. Gao, "Compact wideband equivalent circuit model for electrical modeling of through silicon via," IEEE Trans. Microw. Theory Tech., vol. 59, no. 6, pp. 1454-1460, Jun. 2011.
16. C. Huang, Q.W. Chen, and Z. Y.Wang, "Air-gap through silicon vias," IEEE Electron Device Lett., vol. 34, no. 3, pp. 441-443, Mar. 2013.