Air-gap through-silicon vias

IEEE Electron Device Letters

Volumn 34, Issue 3, 2013, Pages 441-443

  Huang, Cui ^a   Chen, Qianwen ^a   Wang, Zheyao ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Capacitance; poly (propylene carbonate) (PPC); pyrolysis; reliability; through silicon via (TSV)

Indexed keywords

3-D INTEGRATION; AIR-GAPS; CAPACITANCE DENSITY; CMOS COMPATIBLE; FABRICATION AND CHARACTERIZATIONS; HIGH ASPECT RATIO; POLY(PROPYLENE CARBONATE); TECHNOLOGY-BASED; THROUGH SILICON VIAS; THROUGH-SILICON VIA;

ASPECT RATIO; CAPACITANCE; PYROLYSIS; RELIABILITY;

ELECTRONICS PACKAGING;

EID: 84874657948     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2239601     Document Type: Article

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