Passivated contacts to n+ and p+ silicon based on amorphous silicon and thin dielectrics

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Volumn , Issue , 2014, Pages 3442-3447

  Bullock, James ^a   Yan, Di ^a   Cuevas, Andres ^a   Demaurex, Benedicte ^b   Hessler Wyser, Aicha ^b   Wolf, Stefaan De ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b EPFL   (Switzerland)

Author keywords

amorphous silicon; contact passivation; high efficiency; selective contacts; silicon solar cells

Indexed keywords

DIELECTRIC MATERIALS; EFFICIENCY; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; SILICON; SILICON OXIDES; SILICON SOLAR CELLS;

CARRIER RECOMBINATION; CONTACT RECOMBINATIONS; DIELECTRIC INTERLAYERS; HIGH-EFFICIENCY; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INSULATOR THICKNESS; METAL-INSULATOR-SEMICONDUCTOR CONTACTS; SELECTIVE CONTACTS;

AMORPHOUS SILICON;

EID: 84912140416     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6925674     Document Type: Conference Paper

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