Etching silicon with hf-h2o2-based mixtures: Reactivity studies and surface investigations

Journal of Physical Chemistry C

Volumn 118, Issue 4, 2014, Pages 2044-2051

  Gondek, Christoph ^a   Lippold, Marcus ^a   Röver, Ingo ^b   Bohmhammel, Klaus ^a   Kroke, Edwin ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b Deutsche Solar AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSE REFLECTION; OXIDATION BEHAVIORS; PHOTOVOLTAIC INDUSTRY; REACTION PROCESS; REACTIVITY STUDIES; SILICON DISSOLUTION; SILICON OXIDATION; SILICON SURFACE MODIFICATIONS;

ACTIVATION ENERGY; DISSOLUTION; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MIXTURES; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON; SURFACE REACTIONS;

SILICON OXIDES;

EID: 84893295441     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4105757     Document Type: Article

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