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Volumn 4, Issue 97, 2014, Pages 54441-54446
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Enhanced photoelectroctatlytic performance of etched 3C-SiC thin film for water splitting under visible light
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Author keywords
[No Author keywords available]
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Indexed keywords
DRY ETCHING;
ENERGY GAP;
EPITAXIAL GROWTH;
HYDROGEN PRODUCTION;
LIGHT ABSORPTION;
SILICON CARBIDE;
TEMPERATURE;
THIN FILMS;
AS-GROWN THIN FILMS;
DRY ETCHING PROCESS;
HIGH CONDUCTIVITY;
LOW TEMPERATURES;
PHOTOELECTROCATALYTIC;
PHYSICOCHEMICAL PROPERTY;
RECOMBINATION RATE;
SILICON SUBSTRATES;
LIGHT;
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EID: 84908512712
PISSN: None
EISSN: 20462069
Source Type: Journal
DOI: 10.1039/c4ra10409a Document Type: Article |
Times cited : (9)
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References (29)
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