The impact of the surface treatments on the properties of GaN/3C-SiC/Si based schottky barrier diodes

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 1111-1114

  Han, Jisheng ^a   Tanner, Philip ^a   Dimitrijiev, Sima ^a   Shuang, Qu ^b   Shen, Yan ^b   Xu, Xiangang ^b  

^a GRIFFITH UNIVERSITY   (Australia)

^b SHANDONG UNIVERSITY   (China)

Author keywords

3C SiC; GaN; Molybdenum; Nickel; Schottky barrier diode; Titanium

Indexed keywords

ARGON; DEPOSITION; ELECTRIC RESISTANCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLYBDENUM; NICKEL; SILICON CARBIDE; SUBSTRATES; TITANIUM;

3C-SIC; CONTACT DEPOSITION; DIFFERENT SUBSTRATES; MOTT-SCHOTTKY PLOTS; REVERSE BIAS LEAKAGE CURRENT; SERIES RESISTANCES; SUBSTRATE TEMPERATURE; SURFACE PREPARATION;

SCHOTTKY BARRIER DIODES;

EID: 84874081821     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.1111     Document Type: Conference Paper

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