-
8
-
-
84881517657
-
-
H. Zhang M. F. Xu R. L. Cui X. H. Guo S. Y. Yang L. S. Liao Q. J. Jia Y. Chen J. Q. Dong B. Y. Sun Nanotechnology 2013 24 355401
-
(2013)
Nanotechnology
, vol.24
, pp. 355401
-
-
Zhang, H.1
Xu, M.F.2
Cui, R.L.3
Guo, X.H.4
Yang, S.Y.5
Liao, L.S.6
Jia, Q.J.7
Chen, Y.8
Dong, J.Q.9
Sun, B.Y.10
-
12
-
-
84876898742
-
-
T. Stubhan I. Litzov N. Li M. Salinas M. Steidl G. Sauer K. Forberich G. J. Matt M. Halik C. J. Brabec J. Mater. Chem. A 2013 1 6004 6009
-
(2013)
J. Mater. Chem. A
, vol.1
, pp. 6004-6009
-
-
Stubhan, T.1
Litzov, I.2
Li, N.3
Salinas, M.4
Steidl, M.5
Sauer, G.6
Forberich, K.7
Matt, G.J.8
Halik, M.9
Brabec, C.J.10
-
14
-
-
0004005306
-
-
Wiley-Interscience, Hoboken, N.J., 3rd edn
-
S. M. Sze and K. K. Ng, Physics of semiconductor devices, Wiley-Interscience, Hoboken, N.J., 3rd edn, 2007
-
(2007)
Physics of Semiconductor Devices
-
-
Sze, S.M.1
Ng, K.K.2
-
19
-
-
84892542454
-
-
B. R. Lee E. D. Jung Y. S. Nam M. Jung J. S. Park S. Lee H. Choi S. J. Ko N. R. Shin Y. K. Kim S. O. Kim J. Y. Kim H. J. Shin S. Cho M. H. Song Adv. Mater. 2013 3 494 500
-
(2013)
Adv. Mater.
, vol.3
, pp. 494-500
-
-
Lee, B.R.1
Jung, E.D.2
Nam, Y.S.3
Jung, M.4
Park, J.S.5
Lee, S.6
Choi, H.7
Ko, S.J.8
Shin, N.R.9
Kim, Y.K.10
Kim, S.O.11
Kim, J.Y.12
Shin, H.J.13
Cho, S.14
Song, M.H.15
-
21
-
-
79959748049
-
-
H. Choi J. S. Park E. Jeong G. H. Kim B. R. Lee S. O. Kim M. H. Song H. Y. Woo J. Y. Kim Adv. Mater. 2011 23 2759 2763
-
(2011)
Adv. Mater.
, vol.23
, pp. 2759-2763
-
-
Choi, H.1
Park, J.S.2
Jeong, E.3
Kim, G.H.4
Lee, B.R.5
Kim, S.O.6
Song, M.H.7
Woo, H.Y.8
Kim, J.Y.9
-
26
-
-
0003406742
-
-
Wiley, Hoboken, NJ, 8th edn
-
C. Kittel, Introduction to solid state physics, Wiley, Hoboken, NJ, 8th edn, 2005
-
(2005)
Introduction to Solid State Physics
-
-
Kittel, C.1
-
27
-
-
0003610719
-
-
Wiley-Interscience, Hoboken, N.J., Wiley classics library edn
-
E. H. Nicollian and J. R. Brews, MOS (metal oxide semiconductor) physics and technology, Wiley-Interscience, Hoboken, N.J., Wiley classics library edn, 2003
-
(2003)
MOS (Metal Oxide Semiconductor) Physics and Technology
-
-
Nicollian, E.H.1
Brews, J.R.2
-
30
-
-
84875142263
-
-
H. Q. Zhou Y. Zhang J. Seifter S. D. Collins C. Luo G. C. Bazan T. Q. Nguyen A. J. Heeger Adv. Mater. 2013 25 1646 1652
-
(2013)
Adv. Mater.
, vol.25
, pp. 1646-1652
-
-
Zhou, H.Q.1
Zhang, Y.2
Seifter, J.3
Collins, S.D.4
Luo, C.5
Bazan, G.C.6
Nguyen, T.Q.7
Heeger, A.J.8
-
34
-
-
84883291249
-
-
J. Min H. Zhang T. Stubhan Y. N. Luponosov M. Kraft S. A. Ponomarenko T. Ameri U. Scherf C. J. Brabec J. Mater. Chem. A 2013 1 11306 11311
-
(2013)
J. Mater. Chem. A
, vol.1
, pp. 11306-11311
-
-
Min, J.1
Zhang, H.2
Stubhan, T.3
Luponosov, Y.N.4
Kraft, M.5
Ponomarenko, S.A.6
Ameri, T.7
Scherf, U.8
Brabec, C.J.9
-
35
-
-
84864236255
-
-
T. B. Yang M. Wang C. H. Duan X. W. Hu L. Huang J. B. Peng F. Huang X. Gong Energy Environ. Sci. 2012 5 8208 8214
-
(2012)
Energy Environ. Sci.
, vol.5
, pp. 8208-8214
-
-
Yang, T.B.1
Wang, M.2
Duan, C.H.3
Hu, X.W.4
Huang, L.5
Peng, J.B.6
Huang, F.7
Gong, X.8
-
36
-
-
79957976305
-
-
J. H. Seo A. Gutacker Y. M. Sun H. B. Wu F. Huang Y. Cao U. Scherf A. J. Heeger G. C. Bazan J. Am. Chem. Soc. 2011 133 8416 8419
-
(2011)
J. Am. Chem. Soc.
, vol.133
, pp. 8416-8419
-
-
Seo, J.H.1
Gutacker, A.2
Sun, Y.M.3
Wu, H.B.4
Huang, F.5
Cao, Y.6
Scherf, U.7
Heeger, A.J.8
Bazan, G.C.9
-
48
-
-
38549100294
-
-
M. Campoy-Quiles T. Ferenczi T. Agostinelli P. G. Etchegoin Y. Kim T. D. Anthopoulos P. N. Stavrinou D. D. C. Bradley J. Nelson Nat. Mater. 2008 7 158 164
-
(2008)
Nat. Mater.
, vol.7
, pp. 158-164
-
-
Campoy-Quiles, M.1
Ferenczi, T.2
Agostinelli, T.3
Etchegoin, P.G.4
Kim, Y.5
Anthopoulos, T.D.6
Stavrinou, P.N.7
Bradley, D.D.C.8
Nelson, J.9
-
51
-
-
80054800390
-
-
Z. C. He C. M. Zhong X. Huang W. Y. Wong H. B. Wu L. W. Chen S. J. Su Y. Cao Adv. Mater. 2011 23 4636 4643
-
(2011)
Adv. Mater.
, vol.23
, pp. 4636-4643
-
-
He, Z.C.1
Zhong, C.M.2
Huang, X.3
Wong, W.Y.4
Wu, H.B.5
Chen, L.W.6
Su, S.J.7
Cao, Y.8
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