SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 26, Issue 6, 2014, Pages 925-930

Band-bending in organic semiconductors: The role of alkali-halide interlayers

(6) Wang, Haibo a Amsalem, Patrick a Heimel, Georg a Salzmann, Ingo a Koch, Norbert a,b Oehzelt, Martin a,b

a HUMBOLDT UNIVERSITY (Germany)

b HAHN MEITNER INSTITUT (Germany)

Author keywords

alkali halides; band bending; metal insulator semiconductor structures; organic electronics; photoelectron spectroscopy

Indexed keywords

ALKALI-METAL IONS; BANDBENDING; INTERFACE DIPOLE; ORGANIC ELECTRONICS; SEMICONDUCTOR STRUCTURE;

ALKALI METALS; METAL IONS; MIS DEVICES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DOPING;

ALKALI HALIDES;

EID: 84893875084 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201303467 Document Type: Article

Times cited : (88)

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