Graphene oxide-zinc oxide nanocomposite as channel layer for field effect transistors: Effect of ZnO loading on field effect transport

ACS Applied Materials and Interfaces

Volumn 6, Issue 19, 2014, Pages 16941-16948

  Jilani, S Mahaboob ^a   Banerji, Pallab ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

composites; graphene oxide; transistors; zinc oxide

Indexed keywords

COMPOSITE MATERIALS; ENERGY GAP; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHENE TRANSISTORS; NANOCOMPOSITES; SEMICONDUCTING FILMS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

FIELD EFFECT TRANSPORT; GRAPHENE OXIDES; P TYPE CONDUCTIVITY; PHOTOCATALYTIC REDUCTION; SPECTROSCOPIC MEASUREMENTS; TRANSFER CHARACTERISTICS; X-RAY PHOTOELECTRONS; ZINC OXIDE NANOCOMPOSITES;

LOADING;

EID: 84907904036     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am504501n     Document Type: Article

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