MOSFET fluctuation limits on gigascale integration (GSI)

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 508-511

  Tang, Xinghai ^a   De, Vivek K ^b   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); MONTE CARLO METHODS;

COMPACT MODEL; FLUCTUATION LIMIT; GIGASCALE INTEGRATION; INTRINSIC FLUCTUATIONS; MONTE CARLO SIMULATORS; PROCESS VARIATION; RANDOM DOPANTS; THRESHOLD VOLTAGE FLUCTUATIONS;

MOSFET DEVICES;

EID: 84907900173     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. R. W. Keyes, "The Effect of Randomness in the Distribution of Impurity Atoms on FET Threshold, " Appl. Phys., 8, pp. 251-259, 1975.
2. D. Burnett, K. Erington, C. Subramanian, and K. Baker, "Implications of Fundamental Threshold Voltage Variations for High -Density SRAM and Logic circuits, " Symp. VLSI Tech., pp. 15-16, Jun. 1994.
3. V. De, X. Tang, and J. Meindl "Random MOSFET Parameter Fluctuation limits to Gigascale Integration (GSI), " . symp. on VLSI Tech., pp 198-199, Jun. 1996
4. X. Tang, V. De and J. Meindl, "Intrinsic MOSFET Parameter Fluctuations due to Random Dopant Placement", IEEE Trans. VLSI.systems, Vol. 5, pp 369-376, Dec., 1997
5. P. A. Stolk and D. B. Klaassen, "The Effect of Statistical Dopant Fluctuations on MOS Device Performance, " IEDMTech. Dig., pp. 627-630, Dec. 1996.
6. R. Sitte, S. Dimitrijev, and F. B. Harrison, "Device Parameter Changes Caused by Manufacturing Fluctuations of Deep Submicron MOSFET's", IEEE Trans. Elec. Dev., vol. 41, no. II, pp. 2210-2215, Nov., 1994
7. K. Takeuchi, T. Tatsumi and A. Furukawa, "Channel Engineering for the Reduction of RandomDopant- Placement-Induced Threshold Voltage Fluctuations, " IEDMTech. Dig., Dec. 1997
8. SIA National Technology Roadmap for Semiconductors, 1997.