Surface layer analysis of Si sphere by XRF and XPS

CPEM Digest (Conference on Precision Electromagnetic Measurements)

Volumn , Issue , 2014, Pages 208-209

  Zhang, Lulu ^a   Azuma, Yasushi ^a   Kurokawa, Akira ^a   Kuramoto, Naoki ^a   Fujii, Kenichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

chemical analysis; Silicon; surface contamination; thickness measurement

Indexed keywords

SILICON; SPHERES; SURFACE ANALYSIS; THICKNESS MEASUREMENT; UNCERTAINTY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AVOGADRO CONSTANT; CHEMICAL BINDING; CONTAMINATION LAYERS; METALLIC CONTAMINATION; SURFACE CONTAMINATIONS; SURFACE LAYERS; THICKNESS OF THE OXIDE LAYERS; X-RAY FLUORESCENCE SPECTROSCOPY;

CHEMICAL ANALYSIS;

EID: 84907891244     PISSN: 05891485     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CPEM.2014.6898332     Document Type: Conference Paper

References (4)

1. I. Busch et al., "Surface layer determination for the Si spheres of the Avogadro project," Metrologia, vol. 48, pp. S62-S82, 2011.
2. 2 on Si. II. Issues in quantification of the oxide thickness," Surf. Interface Anal. Vol. 33, pp. 640-652, 2002.
3. 2 on Si. VII. Angular accuracy in XPS and an accurate attenuation length," Surf. Interface Anal. Vol. 37, pp. 731-736, 2005.
4. 2 on Si. Quantifying and removing carbonaceous contamination," J. Vac. Sci. Technol. Vol. A 21, pp. 345-352, 2003.