Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier double-gate MOSFET's

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 395-398

  Bescond, M ^a   Autran, J L ^a   Munteanu, D ^a   Cavassilas, N ^a   Lannoo, M ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-SCALE MODEL; DOUBLE GATE MOSFET; SCHOTTKY BARRIERS; SOURCE-TO-DRAIN TUNNELING;

EID: 84907698780     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256897     Document Type: Conference Paper

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